http://www.luguang.cn email:lge@luguang.cn dimensions in inches and (millimeters) sod-523 high voltage switching diode BAS521 features high switching speed: max. 50 ns high continuous reverse voltage: 300 v repetitive peak forward current: 625 ma ultra small plastic smd package. applications high speed switching high voltage switching. description the BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small sod523 (sc-79) plastic smd package. pinning pin description 1 cathode 2 anode limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. t s is the temperature at the soldering point of the cathode tab. symbol parameter conditions min. max. unit v r continuous reverse voltage - 300 v v rrm repetitive peak reverse voltage - 300 v i f continuous forward current t s 90 c; note 1 - 250 ma i frm repetitive peak forward current t p = 1 ms; d = 0.25 - 1a i fsm non-repetitive peak forward current t p =1m s; square wave; t j =25 c prior to surge - 4.5 a p tot total power dissipation t s 90 c; note 1 - 500 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c
http://www.luguang.cn email:lge@luguang.cn BAS521 electrical characteristics t amb =25 c unless otherwise speci?ed. note 1. pulse test: t p = 300 ms; d = 0.02. thermal characteristics notes 1. soldering point of the cathode tab. 2. refer to sod523 (sc-79) standard mounting conditions. symbol parameter conditions min. typ. max. unit v br breakdown voltage i r = 100 ma 300 340 - v v f forward voltage i f = 100 ma; note 1 - 0.95 1.1 v i r reverse current v r = 250 v - 30 150 na v r = 250 v; t a = 150 c - 40 100 ma t rr reverse recovery time when switched from i f = 30 ma to i r = 30 ma; r l = 100 w; measured at i r =3ma - 16 50 ns c d diode capacitance v r = 0 v; f = 1 mhz - 0.4 5 pf symbol parameter conditions value unit r th j-s thermal resistance from junction to solder point note 1 120 k/w r th j-a thermal resistance from junction to ambient note 2 500 k/w
http://www.luguang.cn email:lge@luguang.cn BAS521 graphical data handbook, halfpage 0 0.5 1 (2) 1.5 i f (ma) v f (v) 500 0 400 300 200 100 mhc618 (1) (3) fig.2 forward current as a function of forward voltage; typical values. (1) t amb = 150 c. (2) t amb =75 c. (3) t amb =25 c. handbook, halfpage 200 0 40 80 120 i r ( m a) 160 t j ( c) 10 2 10 1 10 - 1 10 - 2 mhc619 fig.3 reverse current as a function of junction temperature. v r =v rmax ; typical values. handbook, halfpage 0 300 200 100 0 50 100 200 t amb ( c) 150 i f (ma) mhc620 fig.4 maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 01020 40 0.42 0.3 0.34 0.38 30 c d (pf) v r (v) mhc621 fig.5 diode capacitance as a function of reverse voltage; typical values.
http://www.luguang.cn email:lge@luguang.cn BAS521 handbook, full pagewidth mbg703 10 t p ( m s) 1 i fsm (a) 10 2 10 - 1 10 4 10 2 10 3 10 1 fig.6 maximum permissible non-repetitive peak forward current as a function of pulse duration. based on square wave currents. t j =25 c prior to surge.
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